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General Purpose and Low VCE(sat) Transistors | 2N3442

10 A, 140 V NPN Bipolar Power Transistor

Obsolete

Datasheet

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Overview

The 10 A, 140 V NPN Bipolar Power Transistor is designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches.

  • Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min)
  • Excellent Second Breakdown Capability
  • Pb-Free Package is Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2N3442G

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Obsolete

Similar ºìÌÒÊÓƵ
CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

NPN

General Purpose

5

10

140

160

7

-

5.7

20

70

0.08

117

Price N/A

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Reliability Data

Die Related Summary Data

Device: 2N3442G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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