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General Purpose and Low VCE(sat) Transistors | 2N3771

30 A, 40 V NPN Bipolar Power Transistor

Obsolete

Datasheet

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Overview

The 20 A, 60 V NPN Bipolar Power Transistor is designed for linear amplifiers, series pass regulators and inductive switching applications.

  • Forward Biased Second Breakdown Current Capability
    IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771
    IS/b = 2.5 Adc @ VCE = 60 Vdc - 2N3772
  • Pb-Free Packages are Available

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MSL Temp (°C)

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ON Target

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VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

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Reference Price

2N3771G

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Obsolete

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CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

NPN

General Purpose

2

30

40

50

5

-

2.7

15

60

0.2

150

Price N/A

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Reliability Data

Die Related Summary Data

Device: 2N3771G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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