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IGBTs | AFGY120T65SPD-B4

IGBT - 650V, 120A Field Stop Trench IGBT with VCESAT and VTH Binning

Obsolete

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Overview

AFGY120T65SPD-B4 is a 650 V 120 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. the top side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.

  • EV traction motor inverter

  • Electric vehicles
  • Hybrid Electric vehicles

  • Vcesat and Vth Binning
  • Automotive Qualified
  • Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A
  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient
  • Tight Parameter Distribution
  • High Input Impedance
  • 100% of the Parts are Dynamically Tested
  • Short circuit ruggedness > 6μs @ 25 oC
  • Copacked with Soft, Fast Recovery Extremefast Diode
  • This Device is Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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V(BR)CES Typ (V)

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AFGY120T65SPD-B4

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Obsolete

Similar ºìÌÒÊÓƵ
CAD Model

Pb

A

H

P

TO-247-3

340CU

NA

0

TUBE

30

N

-

650

240

1.5

1.3

3.5

6.8

123

-

162

6

-

882

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: AFGY120T65SPD-B4

Equivalent to wafer fab process: IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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