ºìÌÒÊÓƵ

IGBT - 650V, 160A Field Stop Trench IGBT with VCESAT and VTH Binning

Active

Overview

AFGY160T65SPD-B4 is a 650 V 160 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. the top side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.

  • EV traction inverter

  • Electrical Vehicles

  • AEC-Q101 Qualified and PPAP Capable
  • Vcesat and Vth binning
  • Positive Temperature Co-Efficient
  • 100% of the Parts are Dynamically Tested
  • Short circuit ruggedness > 6us @ 25°C
  • This Device is Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
  • Copacked with Soft, Fast Recovery Extremefast Diode

Product Resources

Product services, tools and other useful resources related to AFGY160T65SPD-B4

Product List

If you wish to buy products or product samples, please log in to your ºìÌÒÊÓƵ account.

Search

Close Search

ºìÌÒÊÓƵ:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

AFGY160T65SPD-B4

Loading...

Active

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

Y

-

650

240

1.6

1.4

5.7

12.4

132

~NA~

163

6

~NA~

882

Yes

$7.7908

More Details

Show More

1-25 of 25

ºìÌÒÊÓƵ per page

Jump to :

Product Support

If you're interested to learn about this ºìÌÒÊÓƵ product, contact sales by filling out the form below.