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330V, PDP Trench IGBT

Obsolete

Overview

Using novel trench IGBT technology, ON Semiconductor's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.

  • Consumer
  • PDP TV

  • High current capability
  • Low saturation voltage: VCE(sat) =1.68 V @ IC = 180 A
  • High input impedance
  • RoHS compliant

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CAD Models

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Package Type

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MSL Type

MSL Temp (°C)

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Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGA180N33ATTU

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CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

-

330

450

1.68

-

-

-

-

-

-

-

-

-

No

Price N/A

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