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Si/SiC Hybrid Modules | NXH400N100H4Q2F2

SiC Hybrid Module, I-Type NPC 1000 V, 400 A IGBT, 1200 V, 100 A SiC Diode

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Overview

The NXH400N100H4Q2 is a power integrated module (PIM) containing a single I-type NPC stage containing 100 A, 1200 V SiC diodes for the neutral point clamps, 400 A, 1000 V IGBTs for the outer IGBTs and 400 A, 1000 V IGBTs for the inner IGBTs. An on-board thermistor is included.

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NXH400N100H4Q2F2PG

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Active

CAD Model

Pb

A

H

P

Q2

180BH

NA

0

BTRAY

36

F

I-Type

1000

400

1.77

1.5

$182.825

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NXH400N100H4Q2F2SG

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Active

CAD Model

Pb

A

H

P

Q2

180BS

NA

0

BTRAY

36

F

I-Type

1000

400

1.77

1.5

$182.825

More Details

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Reliability Data

Die Related Summary Data

Device: NXH400N100H4Q2F2PG

Equivalent to wafer fab process: SIC

Product Technology

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Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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