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Silicon Carbide (SiC) Modules | NXH80B120MNQ0

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode

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Overview

The NXH80B120MNQ0 is a EliteSiC power integrated module (PIM) containing a dual full SiC boost stage consisting of two 80mohm/1200V SiC MOSFETs and two 20A/1200V SiC diodes. Two additional 30A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

  • Solar Inverter Boost Stage

  • Solar Inverter
  • UPS
  • Energy Storage Systems

  • SiC MOSFET Specification: 80 mΩ 1200 V
  • 30 A / 1600 V Bypass Diodes
  • SiC Rectifier Specification: VF = 1.4 V
  • Solderable Pins
  • Thermistor

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NXH80B120MNQ0SNG

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CAD Model

Pb

A

H

P

Q0

180AJ

NA

0

BTRAY

24

Y

Two Channel Boost

1200

80

Solar Inverter, Energy Infrastructure

$47.7349

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Reliability Data

Die Related Summary Data

Device: NXH80B120MNQ0SNG

Equivalent to wafer fab process: SIC

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MTBF/MTTF in Hours

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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