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RF Transistors | MCH6001

RF Transistor, NPN Dual, 8 V, 150 mA, fT = 16 GHz

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Overview

MCH6001 is RF Transistor, 8 V, 150 mA, fT = 16 GHz NPN Dual MCPH6 for High Frequency Low-Noise Amplifier.

  • Low-noise use : NF=1.2dB typ (f=1GHz)
  • High cut-off frequency : fT=16GHz typ (VCE=5V)
  • High gain : Forward Transfer Gain=16dB typ (f=1GHz)
  • Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting

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MSL Temp (°C)

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Container Qty.

ON Target

Polarity

IC Continuous (A)

VCEO(sus) Min (V)

hFE Min

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fT Min (MHz)

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|S21e| 2 Typ. (dB)

Reference Price

MCH6001-TL-E

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CAD Model

Pb

A

H

P

SC-88FL / MCPH-6

419AS

1

260

REEL

3000

Y

NPN

0.15

8

60

150

0.6

13000

1.2

16

$0.21

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Reliability Data

Die Related Summary Data

Device: MCH6001-TL-E

Equivalent to wafer fab process: SSD

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SSD

0

6889897810

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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