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RF Transistors | MMBTH81

50 mA, 20 V PNP RF Bipolar Junction Transistor

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Overview

50 mA, 20 V PNP RF Bipolar Junction Transistor is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75.

  • This product is general usage and suitable for many different applications.

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IC Continuous (A)

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MMBTH81

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CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

N

PNP

0.05

20

60

-

0.225

600

-

-

$0.0391

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Reliability Data

Die Related Summary Data

Device: MMBTH81

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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