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Silicon Carbide (SiC) Combo JFETs | UG4SC075009K4S

Silicon Carbide (SiC) Combo JFET - EliteSiC, 7.6 mohm, 1200V, TO-247-4L

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Overview

The UG3SC120009K4S "Combo-JFET" integrates both a 1200V
SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L
package. This innovative approach allows users to create circuitry
that would enable a normally-off switch while leveraging the benefits
of a normally-on SiC JFET. These benefits include ultra-low on-
resistance (RDS(on)) to minimize conduction losses and the exceptional
robustness characteristic of a simplified JFET device structure,
making it capable of handling the high-energy switching required in
circuit protection applications. For switch-mode power conversion
application, this device provides separate access to the JFET and
MOSFET gates for improved speed control and ease of paralleling
multiple devices.

  • Solid State / Semiconductor Circuit Breaker
  • Solid state / Semiconductor Relay
  • Battery Disconnects
  • Surge Protection
  • Inrush Current Control
  • High power switch mode converters (>25kW)

  • Circuit Breaker
  • Battery Charger
  • Solar
  • Energy Storage System
  • Industrial Power Supply

  • Single digit RDS(on)
  • Normally-off capability
  • Improved speed control
  • Improved parallel device operation (3+FETs)
  • Operating temperature: 175°C (max)
  • High pulse current capability
  • Excellent device robustness
  • Silver-sintered die attach for excellent thermal resistance
  • short circuit rated

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UG4SC075009K4S

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0

REEL

1

F

750

344

8.4

TO-247-4L

75

230

$17.7862

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