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Silicon Carbide (SiC) Combo JFETs | UG4SC075011K4S

Silicon Carbide (SiC) Combo JFET - EliteSiC, 10 mohm, 750V, TO-247-4L

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Overview

The UG4SC075011K4S "Combo-JFET" integrates both a 750V SiC
JFET and a Low Voltage Si MOSFET into a single TO-247-4L package.
This innovative approach allows users to create circuitry that would
enable a normally-off switch while leveraging the benefits of a
normally-on SiC JFET. These benefits include ultra-low on-resistance
(RDS(on)) to minimize conduction losses and the exceptional robustness
characteristic of a simplified JFET device structure, making it capable
of handling the high-energy switching required in circuit protection
applications. For switch-mode power conversion application, this
device provides separate access to the JFET and MOSFET gates for
improved speed control and ease of paralleling multiple devices.

  • Solid State / Semiconductor Circuit Breaker
  • Solid state / Semiconductor Relay
  • Battery Disconnects
  • Surge Protection
  • Inrush Current Control
  • High power switch mode converters (>25kW)

  • Circuit Breaker
  • Battery Charger
  • Solar
  • Energy Storage System
  • Industrial Power Supply

  • Low RDS(on)
  • Normally-off capability
  • Improved speed control
  • Improved parallel device operation (3+FETs)
  • Operating temperature: 175°C (max)
  • High pulse current capability
  • Excellent device robustness
  • Silver-sintered die attach for excellent thermal resistance
  • short circuit rated

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UG4SC075011K4S

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750

300

10

TO-247-4L

75

178

$14.9863

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