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Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 1200V, D1, D2PAK

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Overview

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  • Automotive HEV−EV Onboard Chargers
  • Automotive HEV−EV DC−DC Converters

  • PHEV-EV Onboard charger and DC -DC

  • Max Junction Temperature 175°C
  • AEC−Q101 qualified and PPAP Capable
  • Avalanche Rated 200 mJ
  • No Reverse Recovery/No Forward Recovery
  • Ease of Paralleling
  • High Surge Current Capacity
  • Positive Temperature Coefficient

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FFSB10120A-F085

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CAD Model

Pb

A

H

P

D2PAK2 (TO-263-2L)

1

260

REEL

800

Y

D1

Single

1200

10

1.75

90

400

$3.3943

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