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Silicon Carbide (SiC) MOSFETs | NTH4L160N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • PFC
  • Boost Inverter
  • PV Charging

  • Industrial Power Supply
  • Solar Inverter

  • High Junction Temperature
  • 1200V
  • High UIS, Surge Current, and Avalanche

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NTH4L160N120SC1

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CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

Y

M1

1200

17.3

160

34

49.5

175

$4.0653

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Reliability Data

Die Related Summary Data

Device: NTH4L160N120SC1

Equivalent to wafer fab process: SIC

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Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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