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Photo Sensor Transistor | QSB363

Subminiature Plastic Silicon Infrared Phototransistor

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Datasheet

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Overview

The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package.

  • This product is general usage and suitable for many different applications.

  • NPN silicon phototransistor
  • T-3/4 (2 mm) surface mount package
  • Medium wide beam angle 24°
  • Black plastic package
  • Matched emitters: QEB363 or QEB373
  • Daylight filter
  • Tape & Reel option (See tape & Reel specifications)
  • Lead form options: Gullwing, Yoke, Z-Bend

Product Resources

Product services, tools and other useful resources related to QSB363

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Product Change Notification

Reliability Data

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MSL Temp (°C)

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IC (on) (mA)

ICEO (nA)

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QSB363

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Active

CAD Model

Pb

A

H

P

T-3/4 2.50x2.00

100CB

3

260

BLKBG

1000

Y

1

100

0.4

24

$0.1597

More Details

QSB363GR

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Active

CAD Model

Pb

A

H

P

T-3/4 2.50x2.00

100EH

3

260

REEL

1000

N

1

100

0.4

24

$0.1153

More Details

QSB363YR

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Lifetime

CAD Model

Pb

A

H

P

T-3/4 2.50x2.00

100EJ

3

260

REEL

1000

N

1

100

0.4

24

$0.2625

More Details

QSB363ZR

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Active

CAD Model

Pb

A

H

P

T-3/4 2.50x2.00

100EK

3

260

REEL

1000

N

1

100

0.4

24

$0.1153

More Details

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Reliability Data

Die Related Summary Data

Device: QSB363

Equivalent to wafer fab process: PD

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

PD

0

206924763

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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