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Integrated Driver & MOSFET | NCV303150

Integrated Driver and MOSFET with Integrated Current Monitor

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Overview

The NCV303150 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a single package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCV303150 integrated solution greatly reduces package parasitics and board space compared to a discrete component solution.

  • Automotive
  • ADAS GPU and CPU Power

  • Automotive Applications

  • Operating Temperature Range: −40°C to +105°C
  • Precise Integrated Current Monitoring
  • Capable of Switching at Frequencies up to 1 MHz
  • Integrated Protection Features
  • Capable of Average Currents up to 50 A
  • High−Performance, Universal Footprint, Copper−Clip 5 mm x 6 mmWQFNW Package in Wettable Flank
  • NCV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC−Q100Qualified and PPAP Capable

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NCV303150MTW

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CAD Model

Pb

A

H

P

WQFNW39 5x6, 0.45P

512AM

1

260

REEL

3000

N

5

19

3.3V, 5V

50

1

$3.2819

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Reliability Data

Die Related Summary Data

Device: NCV303150MTW

Equivalent to wafer fab process: DrMOS BCD + PT MCM

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Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

DrMOS BCD + PT MCM

1

412052959

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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