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Gate Drivers | NCD57090

Isolated High Current Gate Driver

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Overview

NCD57090A, NCD57090B, NCD57090C, NCD57090D, NCD57090E and NCD57090F are high−current single channel SiC/MOSFET/IGBT gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (NCD57090A/D/F), negative power supply (NCD57090B) and separate high and low (OUTH and OUTL) driver outputs (NCD57090C/E) for system design convenience. NCD57090 (A/B/C/D/E/F) accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V. NCD57090 (A/B/C/D/E/F) are available in wide−body SOIC−8 package.

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  • High Peak Output Current (+6.5 A/-6.5 A)
  • Short Propagation Delays with Accurate Matching
  • High Transient & Electromagnetic Immunity
  • 5 KVrms On-Chip Galvanic Isolation
  • Wide Bias Voltage Ranges and Input Voltage Range
  • Active Miller Clamp or Negative Gate Voltage or Split Outputs

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NCD57090ADWR2G

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Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.265

More Details

NCD57090BDWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.265

More Details

NCD57090CDWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.265

More Details

NCD57090DDWR2G

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Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.265

More Details

NCD57090EDWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.265

More Details

NCD57090FDWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.265

More Details

NCD57091ADWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.265

More Details

NCD57091BDWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.265

More Details

NCD57091CDWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.265

More Details

NCV57090ADWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.265

More Details

NCV57090BDWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.265

More Details

NCV57090CDWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.265

More Details

NCV57090DDWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.265

More Details

NCV57090EDWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.265

More Details

NCV57090FDWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.265

More Details

NCV57091ADWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.495

More Details

NCV57091BDWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.495

More Details

NCV57091CDWR2G

Loading...

Active

CAD Model

Pb

A

H

P

SOIC8 WB

751EW

1

260

REEL

1000

Y

SiC MOSFET

1

Single

Galvanic Isolation

20

20

13

13

6.5

6.5

60

60

15

$1.495

More Details

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Reliability Data

Die Related Summary Data

Device: NCD57090ADWR2G

Equivalent to wafer fab process: ONC25

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

ONC25

1

2712519294

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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